发明名称 Semiconductor device and electronic apparatus using the same
摘要 The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.
申请公布号 US8928362(B2) 申请公布日期 2015.01.06
申请号 US201414176676 申请日期 2014.02.10
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime;Watanabe Yasuko
分类号 H03B1/00;H03F3/45;G11C27/02;H03F3/08;H03K19/003 主分类号 H03B1/00
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a first transistor; a second transistor; a first capacitor; a second capacitor; a third capacitor; a first switch; a second switch; a third switch; a fourth switch; a fifth switch; a sixth switch; a seventh switch; an eighth switch; and a ninth switch, wherein the first transistor and the second transistor have the same polarity, wherein a gate of the first transistor is electrically connected to one terminal of the first capacitor and one terminal of the sixth switch, wherein the other terminal of the first capacitor is electrically connected to one terminal of the first switch and one terminal of the second switch, wherein the other terminal of the second switch is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one terminal of the fourth switch, and one terminal of the eighth switch, wherein the other terminal of the eighth switch is electrically connected to one terminal of the third capacitor and one terminal of the ninth switch, wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the fifth switch, wherein the other terminal of the fourth switch is electrically connected to a gate of the second transistor and one terminal of the second capacitor, wherein the other terminal of the second capacitor is electrically connected to the other of the source and the drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to a first power supply line, wherein one terminal of the third switch is electrically connected to one terminal of the seventh switch, wherein the other terminal of the first switch is electrically connected to an input terminal, and wherein the other terminal of the third switch is electrically connected to an output terminal.
地址 Atsugi-shi, Kanagawa-ken JP