| 发明名称 | Method for bonding of chips on wafers | ||
| 摘要 | Method for bonding of a plurality of chips onto a base wafer which contains chips on the front, the chips being stacked in at least one layer on the back of the base wafer and electrically conductive connections are established between the vertically adjacent chips, with the following steps: a) fixing of the front of the base wafer on a carrier, b) placing at least one layer of chips in defined positions on the back of the base wafer, and c) heat treatment of the chips on the base wafer fixed on the carrier, characterized in that prior to step c) at least partial separation of the chips of the base wafer into separated chip stack sections of the base after takes place. | ||
| 申请公布号 | US8927335(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201013496024 | 申请日期 | 2010.09.03 |
| 申请人 | EV Group E. Thallner GmbH | 发明人 | Wimplinger Markus |
| 分类号 | H01L21/78;H01L21/56;H01L21/683;H01L25/00;H01L23/00;H01L23/31 | 主分类号 | H01L21/78 |
| 代理机构 | Kusner & Jaffe | 代理人 | Kusner & Jaffe |
| 主权项 | 1. Method for bonding a plurality of chips onto a base wafer, the chips being arranged on the base wafer in at least one layer, wherein electrically conductive connections are established for connecting vertically adjacent chips, said method comprising: a) fixing the base wafer on a carrier, b) placing the chips in defined positions on the base wafer in at least one layer, and c) heat treatment of the chips on the base wafer fixed on the carrier to bond the chips on the base wafer, wherein prior to step c) at least a portion of the base wafer is separated into chip stack sections of the base wafer. | ||
| 地址 | St. Florian am Inn AT | ||