发明名称 Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus
摘要 According to one embodiment, there is provided a spin torque oscillator including an oscillation layer formed of a magnetic material, a spin injection layer formed of a magnetic material and configured to inject a spin into the oscillation layer, and a current confinement layer including an insulating portion formed of an oxide or a nitride and a conductive portion formed of a nonmagnetic metal and penetrating the insulating portion in a direction of stacking. The conductive portion of the current confinement layer is positioned near a central portion of a plane of a device region including the oscillation layer and the spin injection layer.
申请公布号 US8929031(B2) 申请公布日期 2015.01.06
申请号 US201113291777 申请日期 2011.11.08
申请人 Kabushiki Kaisha Toshiba 发明人 Takeo Akihiko;Shirotori Satoshi;Yamada Kenichiro;Koui Katsuhiko
分类号 G11B5/127;G11B5/31;H01F10/32;H01F41/30;H01L43/08;G11B5/00 主分类号 G11B5/127
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A spin torque oscillator comprising: an oscillation layer comprising a magnetic material; a spin injection layer comprising a magnetic material and configured to inject a spin into the oscillation layer; and a current confinement layer consisting of an insulating portion comprising an oxide or a nitride and a single conductive portion comprising a nonmagnetic metal and penetrating the insulating portion in a direction of stacking, wherein the conductive portion of the current confinement layer has a rectangular planar shape, and a device region including the oscillation layer and the spin injection layer has a rectangular planar shape in a size of 50 nm×50 nm or less, and wherein the conductive portion of the current confinement layer is positioned near a central portion of a plane of the device region including the oscillation layer and the spin injection layer, and the insulating portion is between each of three sides of the conductive portion and a corresponding one of four sides of the device region, and a fourth side of the conductive portion is at one of the four sides of the device region without the insulating portion being between the fourth side of the conductive region and the one of the four sides of the device region.
地址 Tokyo JP