发明名称 Compensating for process variation in integrated circuit fabrication
摘要 Systems and methods for reducing process sensitivity in integrated circuit (“IC”) fabrication. An integrated circuit structure is provided that includes a first integrated circuit device having at least one parameter influenced by process variation in a first manner. The integrated circuit structure further includes a second integrated device having the least one parameter influenced by the process variation in a second manner. The first manner is opposite of the second manner. The second integrated device is configured to offset or reduce the influence of the process variation on the at least one parameter in the first integrated circuit device.
申请公布号 US8928418(B2) 申请公布日期 2015.01.06
申请号 US201313766304 申请日期 2013.02.13
申请人 International Business Machines Corporation 发明人 Ainspan Herschel A.;Bonaccio Anthony R.;Malladi Ramana M.
分类号 H03B5/08;G05F3/02 主分类号 H03B5/08
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Cain David;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. An integrated circuit structure comprising: a first integrated circuit device comprising at least one parameter influenced by process variation in a first manner; and a second integrated device comprising the least one parameter influenced by the process variation in a second manner, wherein: the first manner is opposite of the second manner; the second integrated device is configured to offset or reduce the influence of the process variation on the at least one parameter in the first integrated circuit device; the integrated circuit structure is a voltage controlled oscillator (VCO); the VCO comprises a resonator comprising the first integrated circuit device and the second integrated circuit device; and the resonator comprises at least one branch of fixed capacitors and at least one branch of finetune capacitors.
地址 Armonk NY US