Methods of forming through substrate interconnects

摘要

A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

主权项

1. A method of forming a through substrate interconnect, comprising:
forming a passivation dielectric over a back-side of a semiconductor substrate; after forming the passivation dielectric, etching through the passivation dielectric and then into semiconductive material of the substrate from the substrate back-side to form a via; applying a liquid dielectric over the passivation dielectric and into the via to line only an elevationally outermost portion of sidewalls of the via; solidifying the liquid dielectric within the via; vapor depositing a dielectric material to within the via to line over the solidified dielectric within the via and to line over sidewall portions of the via received elevationally inward of the solidified dielectric within the via; and forming conductive material within the via over the vapor deposited dielectric material and forming a through substrate interconnect with the conductive material.