Production process of epitaxial silicon carbide single crystal substrate

摘要

An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

主权项

1. A process for producing an epitaxial silicon carbide single crystal substrate by epitaxially growing silicon carbide on a silicon carbide single crystal substrate, the production process comprising
performing pretreatment etching by flowing at least one gas of the formula SiHnCl4-n, wherein n is an integer of 0 to 3, together with a hydrogen gas before epitaxial growth and thereafter, forming an epitaxial layer.