Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level

摘要

Embodiment of the present invention provides a method of forming a semiconductor device. The method includes providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of the semiconductor substrate; amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with a stress liner; and subjecting the amorphized silicon-carbon layer to a solid phase epitaxy (SPE) process to form a highly substitutional silicon-carbon film. In one embodiment, the highly substitutional silicon-carbon film is formed to be embedded stressors in the source/drain regions of an nFET transistor, and provides tensile stress to a channel region of the nFET transistor for performance enhancement.

主权项

1. A method comprising:
providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of said semiconductor substrate; amorphizing said silicon-carbon layer; covering said amorphized silicon-carbon layer with a stress liner; and subjecting said amorphized silicon-carbon layer to a solid phase epitaxy (SPE) process.