Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit scheme

摘要

A method of programming a NAND flash memory cell string. The method includes a pre-boost stage configured to elevate channel voltage of a selected memory cell, and a boost stage is introduced after the pre-boost stage. The pre-boost stage has at least the following steps of biasing a bit line to a first voltage, biasing a string select transistor to a second voltage; and ramping down the string select transistor to the first voltage. In particular, the second voltage is higher than the first voltage.

主权项

1. A method of programming a NAND flash memory cell, the method comprising:
a pre-boost stage elevating a channel voltage of a selected memory cell; and a boost stage after the pre-boost stage, wherein the pre-boost stage comprises: biasing a bit line to a first voltage; biasing a string select transistor to a second voltage; and ramping down the string select transistor to the first voltage.