| 摘要 |
A method for manufacturing a semiconductor apparatus includes the first step of forming a silicon oxide film including a main portion on a second portion and a sub portion between a first portion and a silicon nitride film, the second step of forming a first conductivity type impurity region under the silicon oxide film, and the third step of forming a semiconductor element including a second conductivity type impurity region having an opposite conductivity to the first conductivity type impurity region in the first portion. In the second step, angled ion implantation is performed into a region under the sub portion at an implantation angle using the silicon nitride film as a mask. |
