发明名称 Semiconductor package having internal shunt and solder stop dimples
摘要 A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
申请公布号 US8928115(B2) 申请公布日期 2015.01.06
申请号 US201313757640 申请日期 2013.02.01
申请人 International Rectifier Corporation 发明人 Hauenstein Henning M.
分类号 H01L29/00;H01L23/36;H01L23/13;H01L23/15;H01L23/498;H01L23/00;H01L25/07;H01L25/16;H01L23/367;H01L23/552;H01L23/62 主分类号 H01L29/00
代理机构 Farjami & Farjami LLP 代理人 Farjami & Farjami LLP
主权项 1. A semiconductor package comprising: first and second conductive layers on top and bottom surfaces of an insulation layer; a semiconductor die mounted on said first conductive layer and having an electrode electrically connected to said first conductive layer; a current sense resistor situated in an opening extending from said top surface to said bottom surface of said insulation layer, said current sense resistor electrically connected to said first and second conductive layers and to said electrode of said semiconductor die.
地址 El Segundo CA US