Trench type power transistor device with super junction

摘要

The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an epitaxial layer of a second conductive type is formed on the substrate. Next, a through hole is formed in the epitaxial layer, and the through hole penetrates through the epitaxial layer. Two doped drain regions of the first conductivity type are then formed in the epitaxial layer respectively at two sides of the through hole, and the doped drain regions extend from a top surface of the epitaxial layer to be in contact with the substrate.

主权项

1. A trench type power transistor device with a super junction, comprising:
a substrate of a first conductivity type; a first epitaxial layer of a second conductivity type different from said first conductivity type, wherein said first epitaxial layer is disposed on said substrate and has at least one through hole; at least two doped drain regions of said first conductivity type which are disposed in said first epitaxial layer at both sides of said through hole and contact said substrate, wherein said at least two doped drain regions contact said first epitaxial layer; an insulating layer disposed in said through hole and having an upper surface lower than the upper surface of said first epitaxial layer; at least two doped channel regions of said second conductivity type which are disposed respectively in said first epitaxial layer on said doped drain regions and respectively contact said doped drain regions; a gate structure disposed in said through hole on said insulating layer; and at least two doped source regions of said first conductivity type disposed in said first epitaxial layer respectively at said sides of said through hole and respectively being in contact with said doped channel regions.