| 发明名称 | Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same | ||
| 摘要 | A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | ||
| 申请公布号 | US8928004(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201314085523 | 申请日期 | 2013.11.20 |
| 申请人 | Panasonic Intellectual Property Management Co., Ltd. | 发明人 | Choe Songbaek;Yokogawa Toshiya;Inoue Akira;Yamada Atsushi |
| 分类号 | H01L29/15;H01L31/036;H01L21/20;H01L21/36;H01L33/18;C30B25/04;C30B25/18;H01L33/16;H01L21/02;H01L33/00;H01L33/20;C30B29/40;H01L33/58;H01L33/32;H01L33/12 | 主分类号 | H01L29/15 |
| 代理机构 | Renner, Otto, Boisselle & Sklar, LLP | 代理人 | Renner, Otto, Boisselle & Sklar, LLP |
| 主权项 | 1. A multilayer structure, comprising: a structure for growth of a nitride semiconductor layer; and a nitride semiconductor layer, wherein the structure for growth of the nitride semiconductor layer comprises: a sapphire substrate having a growing plane which is an m-plane; anda plurality of ridge-shaped nitride semiconductor regions formed on the growing plane of the sapphire substrate; a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor regions is the m-plane of the sapphire substrate; a growing plane of the plurality of ridge-shaped nitride semiconductor regions is an m-plane; an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor regions and a c-axis of the sapphire substrate is not less than 5° and not more than 35°; a back surface of the nitride semiconductor layer is in contact with the plurality of the ridge-shaped nitride semiconductor regions; and a front surface of the nitride semiconductor layer has a surface rms roughness of not more than 100 nanometers. | ||
| 地址 | Osaka JP | ||