Thin film transistor substrate and method fabricating the same

摘要

Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.

主权项

1. A thin film transistor array substrate, comprising:
a substrate comprising a display area and a non-display area, wherein the display area is surrounded by the non-display area; a thin film transistor located in the display area of the substrate; a first patterned metal layer disposed on the substrate, comprising: a gate electrode of the thin film transistor; a scan line electrically connected to the gate electrode, wherein the scan line is located in the display area and the non-display area; and a connecting line located in the non-display area; and a second patterned metal layer disposed on a gate insulating layer, comprising: a metal contact, a source electrode, and a drain electrode of the thin film transistor; and a signal line electrically connected to the source electrode and the drain electrode, all formed from the same patterned metal layer, wherein the signal line is located in the display area and the non-display area, wherein the gate insulating layer covers at least a portion of the scan line and the connecting line, the connecting line is in contact with the signal line at the non-display area via a first through-hole of the gate insulating layer, and the metal contact is in contact with the connecting line via a second through-hole of the gate insulating layer at the non-display area.