Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition

摘要

A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

主权项

1. A multilayer resist process pattern-forming method comprising:
providing an inorganic film over a substrate, the inorganic film being provided using a composition comprising:
a compound comprising a metal compound that comprises a hydrolyzable group, a hydrolysate of a metal compound that comprises a hydrolyzable group, a hydrolysis-condensation product of a metal compound that comprises a hydrolyzable group, or a combination thereof, the compound comprising at least one metal element belonging to Group 3, Group 4, Group 5, Group 6, Group 12, or Group 13 of the Periodic Table of the Elements; andan organic solvent; providing a protective film on the inorganic film; providing a resist pattern on the protective film; and providing a pattern on the substrate by etching that utilizes the resist pattern as a mask.