System and method of dosage profile control

摘要

A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

主权项

1. A system for implanting dopants into a semiconductor wafer comprising:
an ion beam generator; a wafer holder for holding a wafer; a wafer positioning system able to adjust the position of the wafer holder along a first direction and a second direction; and a wafer positioning control system communicably coupled to the wafer positioning system, the wafer positioning control system comprising a storage element for storing a first velocity for a first cell of the wafer and a second velocity for a second cell of the wafer, wherein the first velocity and the second velocity are track velocities.