Semiconductor device,申请号US201414488649-传众专利搜索

发明名称	Semiconductor device
摘要	A semiconductor device of this embodiment includes: a first semiconductor layer including AlXGa1-XN; a second semiconductor layer provided above the first semiconductor layer, and including undoped or n-type AlYGa1-YN; a first and second electrodes provided above the second semiconductor layer; a third semiconductor layer provided above the second semiconductor layer between the first electrode and the second electrode, is at a distance from each of the first and second electrodes, and including p-type AlZGa1-ZN; a control electrode provided above the third semiconductor layer; a fourth semiconductor layer provided above the third semiconductor layer between the first electrode and the control electrode, is at a distance from the control electrode, and including n-type AlUGa1-UN; and a fifth semiconductor layer provided above a portion of the third semiconductor layer between the control electrode and the second electrode, is at a distance from the control electrode, and including n-type AlUGa1-UN.
申请公布号	US9391142(B2)	申请公布日期	2016.07.12
申请号	US201414488649	申请日期	2014.09.17
申请人	Kabushiki Kaisha Toshiba	发明人	Saito Wataru;Saito Yasunobu
分类号	H01L29/778;H01L29/20;H01L29/205;H01L29/10;H01L29/423;H01L29/40;H01L29/417;H01L29/06	主分类号	H01L29/778
代理机构	White & Case LLP	代理人	White & Case LLP
主权项	1. A semiconductor device comprising: a first semiconductor layer including AlXGa1-XN (0≦X<1); a second semiconductor layer provided above the first semiconductor layer, the second semiconductor layer including undoped or n-type AlYGa1-YN (0<Y≦1, X<Y); a first electrode electrically connected to the second semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a third semiconductor layer provided above a portion of the second semiconductor layer between the first electrode and the second electrode, the third semiconductor layer being separated from each of the first electrode and the second electrode, the third semiconductor layer including p-type AlZGa1-ZN (0≦Z<1); a control electrode electrically connected to the third semiconductor layer; a fourth semiconductor layer provided above a portion of the third semiconductor layer between the first electrode and the control electrode, the fourth semiconductor layer being separated from the control electrode, the fourth semiconductor layer including n-type AlUGa1-UN (0≦U<1); and a fifth semiconductor layer provided above a portion of the third semiconductor layer between the control electrode and the second electrode, the fifth semiconductor layer being separated from the control electrode, the fifth semiconductor layer including n-type AlUGa1-UN (0≦U<1).
地址	Tokyo JP