发明名称 Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
摘要 An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The link or siring includes at least one contact configured to electrically connect the memory cells to at least one control line, and the number of contacts in the string or link is the same as or less than the number of memory cells in the string or link.
申请公布号 US9391079(B2) 申请公布日期 2016.07.12
申请号 US201514856943 申请日期 2015.09.17
申请人 Zeno Semiconductor, Inc. 发明人 Widjaja Yuniarto
分类号 G11C16/04;H01L27/108;G11C11/404;G11C11/4091;G11C11/4099 主分类号 G11C16/04
代理机构 Law Office of Alan W. Cannon 代理人 Cannon Alan W.;Law Office of Alan W. Cannon
主权项 1. An integrated circuit comprising: a link or string of semiconductor memory cells, wherein each said semiconductor memory cell comprises: a floating body region for storing charge indicating a state of said semiconductor memory cell; and a back-bias region; wherein applying a voltage to said back-bias region results in at least two stable floating body charge levels; wherein said link or string comprises at least one contact configured to electrically connect said semiconductor memory cells to at least one control line; and wherein a number of said at least one contact is the same as or less than a number of said semiconductor memory cells in said link or string.
地址 Sunnyvale CA US