Semiconductor interband lasers and method of forming

摘要

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

主权项

1. A semiconductor interband laser comprising:
a first cladding layer formed using a first high-doped semiconductor material having a first refractive index; a second cladding layer formed using a second high-doped semiconductor material having a second refractive index; and a waveguide core having a waveguide core refractive index and being positioned between the first and the second cladding layers, the waveguide core including an active region configured to generate light based on interband transitions, the light defining a lasing wavelength; and wherein the first refractive index and second refractive index are exceeded by the waveguide core refractive index by at least 0.43.