发明名称 Semiconductor memory device and method of operating the same
摘要 A semiconductor memory device includes memory cells for storing data, page buffers each configured to comprise a dynamic latch and a static latch on which data to be programmed in to the memory cells or data read from the memory cells are latched, and a control logic configured to store a plurality of refresh mode select codes corresponding to various refresh cycles, and refresh the dynamic latch by exchanging data between the static latch and the dynamic latch according to a refresh cycle corresponding to a selected refresh mode select code.
申请公布号 US8929155(B2) 申请公布日期 2015.01.06
申请号 US201113183641 申请日期 2011.07.15
申请人 SK Hynix Inc. 发明人 Yoo Byoung Sung;Yang Chang Won
分类号 G11C7/10;G11C16/04 主分类号 G11C7/10
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A semiconductor memory device, comprising: memory cells for storing data; page buffers each configured to comprise a dynamic latch and a static latch on which data to be programmed in to the memory cells or data read from the memory cells are latched; and a control logic configured to store a plurality of refresh mode select codes corresponding to a plurality of supplied numbers of program pulses, respectively, wherein the data is programmed into the memory cells by supplying program pulses to the memory cells in response to a program command, wherein the control logic is configured to select a refresh mode select code from the plurality of refresh mode select codes based on a refresh code from an external device of the semiconductor memory device, the refresh code being received together with the program command, and wherein the control logic is configured to refresh the dynamic latch by exchanging data between the static latch and the dynamic latch whenever program pulses are supplied a predetermined number of times according to the selected refresh mode select code.
地址 Gyeonggi-do KR