Semiconductor light emitting device and method for manufacturing the same

摘要

Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

主权项

1. A semiconductor light emitting device, comprising:
a first conductive semiconductor layer including an n-type dopant; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a third conductive semiconductor layer disposed between the active layer and the second conductive semiconductor layer; a fourth conductive semiconductor layer disposed between the third conductive semiconductor layer and the second conductive semiconductor layer; a fifth conductive semiconductor layer disposed between the fourth conductive semiconductor layer and the second conductive semiconductor layer; and a sixth conductive semiconductor layer disposed between the fifth conductive semiconductor layer and the second conductive semiconductor layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer electrically connected to the second conductive semiconductor layer, wherein the second to sixth conductive semiconductor layers include a p-type dopant, wherein the third to sixth conductive semiconductor layers include an AlGaN-based semiconductor layer, wherein the second conductive semiconductor layer is formed of a different semiconductor from the third to sixth conductive semiconductor layers, wherein the second conductive semiconductor layer includes a GaN-based semiconductor, wherein the sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm, wherein the sixth conductive semiconductor layer has the thickness different from a thickness of each of the third and fourth conductive semiconductor layers, wherein the active layer includes plurality of quantum barrier layers and plurality of quantum well layers, wherein a cycle of the quantum barrier layer and the quantum well layer of the active layer includes a cycle of 2 to 10, wherein the plurality of quantum well layers include an InGaN semiconductor, and wherein the plurality of quantum barrier layers includes a GaN-based semiconductor.