发明名称 Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices
摘要 A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.
申请公布号 US8927857(B2) 申请公布日期 2015.01.06
申请号 US201113036584 申请日期 2011.02.28
申请人 International Business Machines Corporation 发明人 Abou-Kandil Ahmed;Afify Nasser;Andreoni Wanda;Curioni Alessandro;Hong Augustin J.;Kim Jeehwan;Khomyakov Petr;Sadana Devendra K.
分类号 H01L31/20;H01L31/0392;H01L21/02;H01L31/0376;H01L31/075;C23C16/24 主分类号 H01L31/20
代理机构 Harrington & Smith 代理人 Harrington & Smith ;Percello Louis J.
主权项 1. A method of producing a photovoltaic device comprising: providing a stretchable substrate for the photovoltaic device; stretching the substrate to produce a stretched substrate wherein the stretching of the substrate comprises linearly elongating the substrate by applying a force to each of the opposite ends of the substrate; depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device; wherein the substrate is subject to the stretching prior to the depositing of the structure.
地址 Armonk NY US