发明名称 |
Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices |
摘要 |
A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device. |
申请公布号 |
US8927857(B2) |
申请公布日期 |
2015.01.06 |
申请号 |
US201113036584 |
申请日期 |
2011.02.28 |
申请人 |
International Business Machines Corporation |
发明人 |
Abou-Kandil Ahmed;Afify Nasser;Andreoni Wanda;Curioni Alessandro;Hong Augustin J.;Kim Jeehwan;Khomyakov Petr;Sadana Devendra K. |
分类号 |
H01L31/20;H01L31/0392;H01L21/02;H01L31/0376;H01L31/075;C23C16/24 |
主分类号 |
H01L31/20 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. A method of producing a photovoltaic device comprising:
providing a stretchable substrate for the photovoltaic device; stretching the substrate to produce a stretched substrate wherein the stretching of the substrate comprises linearly elongating the substrate by applying a force to each of the opposite ends of the substrate; depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device; wherein the substrate is subject to the stretching prior to the depositing of the structure. |
地址 |
Armonk NY US |