Semiconductor devices having through-vias and methods for fabricating the same

摘要

Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer.

主权项

1. A semiconductor device comprising:
a substrate having an active surface, a non-active surface, and a via-hole extending from the active surface to the non-active surface; a through-via provided in the via-hole; a via-insulating layer extending along an inner sidewall of the via-hole and surrounding a sidewall of the through-via; a sacrificial layer extending along the inner sidewall of the via-hole from the via-insulating layer to the non-active surface of the substrate; a lower insulating layer covering the non-active surface of the substrate; and a terminal provided on the lower insulating layer and electrically connected to the through-via.