Semiconductor structure and semiconductor fabricating process for the same

摘要

A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer; and forming a second dielectric layer over the conductive fill and the first dielectric layer.

主权项

1. A semiconductor fabricating process, comprising:
patterning a first hard mask layer to have a first opening penetrating through the first hard mask layer; etching a first dielectric layer underlying the first hard mask layer through the first opening to form a via extending through the first dielectric layer; removing the first hard mask layer; depositing a transitional layer to fill the via and cover the first dielectric layer; depositing a second hard mask on the transitional layer; patterning the second hard mask layer to form a second opening penetrating through the second hard mask layer; etching the transitional layer through the second opening to form a trench extending into the transitional layer above an interface level that is coplanar with an uppermost surface of the first dielectric layer, and selectively descending into the transitional layer below the interface level; depositing a conductive filling layer to fill the trench and cover the second hard mask layer; and polishing the second hard mask layer and respective top portions of the conductive filling layer and the transitional layer to expose the transitional layer such that the conductive filling layer deposited within the trench is formed as a conductive fill.