High-mobility multiple-gate transistor with improved on-to-off current ratio

摘要

A multi-gate transistor includes a semiconductor fin over a substrate. The semiconductor fin includes a central fin formed of a first semiconductor material; and a semiconductor layer having a first portion and a second portion on opposite sidewalls of the central fin. The semiconductor layer includes a second semiconductor material different from the first semiconductor material. The multi-gate transistor further includes a gate electrode wrapping around sidewalls of the semiconductor fin; and a source region and a drain region on opposite ends of the semiconductor fin. Each of the central fin and the semiconductor layer extends from the source region to the drain region.

主权项

1. A method comprising:
forming a semiconductor fin comprising:
forming a central fin comprising a first semiconductor material; andforming a semiconductor layer comprising a first portion and a second portion on opposite sidewalls of the central fin, wherein the semiconductor layer comprises a second semiconductor material different from the first semiconductor material; forming a gate electrode on sidewalls of the semiconductor fin; and forming a source region and a drain region on opposite ends of the semiconductor fin, wherein each of the central fin and the semiconductor layer extends from the source region to the drain region.