| 发明名称 | Production method of resist composition for lithography | ||
| 摘要 | A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects. | ||
| 申请公布号 | US8927192(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201213605360 | 申请日期 | 2012.09.06 |
| 申请人 | Shin-Etsu Chemical Co., Ltd. | 发明人 | Ogihara Tsutomu;Iwabuchi Motoaki |
| 分类号 | B01D35/01;G03F7/004;G03F7/16;B01D36/00 | 主分类号 | B01D35/01 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, the filter having fine pores that allow the resist composition for lithography to pass therethrough and having a critical particle diameter of 50 nm or smaller, wherein in the filtering step, after an interior of a vessel having the filter installed therein is kept under reduced pressure so that gases remaining in the filter are removed, the resist composition for lithography is passed through the filter. | ||
| 地址 | Tokyo JP | ||