发明名称 Apparatus and methods for movable megasonic wafer probe
摘要 Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.
申请公布号 US8926762(B2) 申请公布日期 2015.01.06
申请号 US201113226216 申请日期 2011.09.06
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chien Ying-Hsueh Chang;Ku Shao-Yen;Yeh Ming-Hsi;Yang Chi-Ming;Lin Chin-Hsiang
分类号 B08B3/04;B08B3/12 主分类号 B08B3/04
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method, comprising: positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface, the movable probe further having a bottom foot portion; contacting the wafer surface with the bottom foot portion; applying a liquid onto the wafer surface through the open bottom portion of the movable probe while the bottom foot portion is contacting the wafer surface; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface.
地址 Hsin-Chu TW