发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THERROF |
摘要 |
<p>The present invention relates to a thin film transistor display board and a manufacturing method thereof. The thin film transistor display board includes a polycrystalline silicon thin film transistor which is formed on a substrate. A source region and a drain region of a semiconductor layer of a thin film transistor are electrically connected to a power source supply line. The present invention removes the floating state of the polycrystalline silicon semiconductor layer by a voltage of the power source supply line. Thereby, an influence by a junction coupling generated in the source and drain regions is minimized even though the gate voltage of the thin film transistor is changed.</p> |
申请公布号 |
KR20150001154(A) |
申请公布日期 |
2015.01.06 |
申请号 |
KR20130073922 |
申请日期 |
2013.06.26 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
WANG, IN SOO |
分类号 |
H01L51/52;G09G3/30;H01L29/786 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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