发明名称 THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THERROF
摘要 <p>The present invention relates to a thin film transistor display board and a manufacturing method thereof. The thin film transistor display board includes a polycrystalline silicon thin film transistor which is formed on a substrate. A source region and a drain region of a semiconductor layer of a thin film transistor are electrically connected to a power source supply line. The present invention removes the floating state of the polycrystalline silicon semiconductor layer by a voltage of the power source supply line. Thereby, an influence by a junction coupling generated in the source and drain regions is minimized even though the gate voltage of the thin film transistor is changed.</p>
申请公布号 KR20150001154(A) 申请公布日期 2015.01.06
申请号 KR20130073922 申请日期 2013.06.26
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 WANG, IN SOO
分类号 H01L51/52;G09G3/30;H01L29/786 主分类号 H01L51/52
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