Wafer edge protection structure

摘要

Among other things, one or more wafer edge protection structures and techniques for forming such wafer edge protection structures are provided. A substrate of a semiconductor wafer comprises an edge, such as a beveled wafer edge portion, that is susceptible to Epi growth which results in undesirable particle contamination of the semiconductor wafer. Accordingly, a wafer edge protection structure is formed over the beveled wafer edge portion. The wafer edge protection structure comprises an Epi growth resistant material, such as an amorphous material, a non-crystalline material, oxide, or other material. In this way, the wafer edge protection structure mitigates Epi growth on the beveled wafer edge portion, where the Epi growth increases a likelihood of particle contamination from cracking or peeling of an Epi film resulting from the Epi growth. The wafer edge protection structure thus mitigates at least some contamination of the wafer.

主权项

1. A semiconductor wafer, comprising:
a substrate comprising a beveled wafer edge portion; and a wafer edge protection structure formed over a top edge surface of the beveled wafer edge portion and a side edge surface of the beveled wafer edge portion, the wafer edge protection structure comprising:
an epitaxial growth resistant layer; anda hard mask.