Magnetic memory element

摘要

According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.

主权项

1. A magnetic memory element comprising:
a stacked body including:
a first stacked unit including:
a first ferromagnetic layer, a magnetization of the first ferromagnetic layer being fixed in a first direction;a second ferromagnetic layer, a direction of a magnetization of the second ferromagnetic layer being variable in a second direction; anda first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the first nonmagnetic layer, the first ferromagnetic layer and the second ferromagnetic layer being stacked in a stacking direction; anda second stacked unit including a third ferromagnetic layer stacked with the first stacked unit in the stacking direction, a direction of a magnetization of the third ferromagnetic layer being variable in a third direction; anda conductive shield opposed to at least a part of a side surface of the second stacked unit, an electric potential of the conductive shield being controllable.