Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device

摘要

An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n− drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NPT structure device. A low life time region is also provided in the interface between the n− drift region and a p collector region, and extends between the n− drift region and the p collector region. Thus, it is possible to provide a low-loss semiconductor device, a method for manufacturing the semiconductor device and a method for controlling the semiconductor device, in which the reverse recovery loss is reduced while the reverse recovery current peak and the jump voltage peak during reverse recovery are suppressed.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type, wherein the first semiconductor region is a substrate; a second semiconductor region of a second conductivity type which is selectively provided in a surface layer of one side of the first semiconductor region; a third semiconductor region of the first conductivity type which is selectively provided inside the second semiconductor region; a gate electrode which is provided in a surface of a portion of the second semiconductor region which is located between the first semiconductor region and the third semiconductor region, a gate insulating film being put between the gate electrode and the second semiconductor region; a fourth semiconductor region of the second conductivity type which is provided on another side of the first semiconductor region; a low life time region which is provided in an interface between the first semiconductor region and the fourth semiconductor region and which is shorter in carrier life time than any other region; a fifth semiconductor region of the second conductivity type which is provided in an outer circumferential portion of the first semiconductor region so as to extend from the one side of the first semiconductor region, penetrate the first semiconductor region and the low life time region and reach the fourth semiconductor region; a first electrode which touches the second semiconductor region and the third semiconductor region; and a second electrode which touches the fourth semiconductor region; wherein: the first semiconductor region is set to have a predetermined carrier life time by light ion irradiation to reduce the carrier life time; the light ion irradiation is carried out at acceleration energy from 4 MeV to 6 MeV and dose from 10 kGry to 30 kGry; and the low life time region is provided on a surface opposite a terminal structure of the semiconductor device and reaches the fifth semiconductor region.