Thermal infrared sensor and manufacturing method thereof

摘要

A thermal infrared sensor includes an infrared ray absorbing film that is thermally separated from a semiconductor substrate by a hollow part; and a temperature sensor configured to detect temperature changes of the infrared ray absorbing film. The infrared ray absorbing film includes an infrared ray antireflection structure configured with a sub wavelength structure, the infrared ray antireflection structure being provided on a surface of the infrared ray absorbing film facing the semiconductor substrate.

主权项

1. A thermal infrared sensor comprising:
a sensor part including an infrared ray absorbing film that is separated from a semiconductor substrate by a hollow part; a temperature sensor configured to detect temperature changes of the infrared ray absorbing film; and wirings coupled to the temperature sensor, for obtaining electric potential of the temperature sensor, wherein the infrared ray absorbing film of the sensor part includes an infrared ray antireflection structure configured with a sub wavelength structure separated from the semiconductor substrate by the hollow part, the infrared ray antireflection structure being provided in direct contact with a surface of the infrared ray absorbing film of the sensor part facing the semiconductor substrate, and wherein infrared rays enter from a surface of the semiconductor substrate which is on a side of the semiconductor substrate on which the wirings are not formed.