发明名称 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION
摘要 The present invention provides a composition for forming a coating type BPSG film, which has excellent adhesiveness to the micro patterns; is conveniently perform wet-etching with a stripper without causing damage against a coating type organic film and a CVD film having carbon as a main ingredient, which are necessary in a semiconductor substrate or a patterning process; and forms a BPSG film capable of suppressing the particle occurrence by forming in a coating process. The composition for forming a coating type BPSG film comprises at least one among structures having a silicate backbone represented by chemical formula (1), at least one among structures having a phosphate backbone represented by chemical formula (2), and at least one among structures having a borate backbone represented by chemical formula (3).
申请公布号 KR20150001644(A) 申请公布日期 2015.01.06
申请号 KR20140077189 申请日期 2014.06.24
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OGIHARA TSUTOMU;UEDA TAKAFUMI;TANEDA YOSHINORI;TACHIBANA SEIICHIRO
分类号 G03F7/11;H01L21/316 主分类号 G03F7/11
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