发明名称 |
COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION |
摘要 |
The present invention provides a composition for forming a coating type BPSG film, which has excellent adhesiveness to the micro patterns; is conveniently perform wet-etching with a stripper without causing damage against a coating type organic film and a CVD film having carbon as a main ingredient, which are necessary in a semiconductor substrate or a patterning process; and forms a BPSG film capable of suppressing the particle occurrence by forming in a coating process. The composition for forming a coating type BPSG film comprises at least one among structures having a silicate backbone represented by chemical formula (1), at least one among structures having a phosphate backbone represented by chemical formula (2), and at least one among structures having a borate backbone represented by chemical formula (3). |
申请公布号 |
KR20150001644(A) |
申请公布日期 |
2015.01.06 |
申请号 |
KR20140077189 |
申请日期 |
2014.06.24 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;UEDA TAKAFUMI;TANEDA YOSHINORI;TACHIBANA SEIICHIRO |
分类号 |
G03F7/11;H01L21/316 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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