| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin film transistor that has high carrier mobility and is excellent in on/off ratio, and a manufacturing method for the same.SOLUTION: In an organic thin film transistor comprising a gate electrode, an organic semiconductor layer, an organic gate insulation layer, a source electrode and a drain electrode which are formed on a substrate, a layer adjacent to the substrate side of the organic semiconductor layer has a group having active hydrogen on the surface thereof, the organic semiconductor layer contains organic semiconductor I having a specific condensed polycyclic aromatic structure, and the group having the active hydrogen and a group containing silyl group represented by the following general formula (Si) possessed by the organic semiconductor I react with each other so that the adjacent layer and the organic semiconductor layer are bonded to each other. A manufacturing method for the organic thin film transistor is also provided. In the general formula (Si): -L-Si(R)(R)X, Lrepresents a bivalent coupling group, Rand Rindependently represent alkyl group, alkoxy group or halogen atom. X represents alkoxy group or halogen atom.SELECTED DRAWING: Figure 1 |
