Solar cell emitter region fabrication using ion implantation

摘要

Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

主权项

1. A method of fabricating alternating N-type and P-type emitter regions of a solar cell, the method comprising:
forming a thin dielectric layer on a substrate, wherein the substrate is a monocrystalline silicon substrate; forming a silicon layer on the thin dielectric layer; implanting, through a first shadow mask, dopant impurity atoms of a first conductivity type in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer; implanting, through a second shadow mask, dopant impurity atoms of a second, opposite, conductivity type in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer; removing the remaining non-implanted regions of the silicon layer to expose portions of the substrate with a selective etch process preserving the first implanted regions and the second implanted regions of the silicon layer; texturizing the exposed portions of the substrate; and annealing the first implanted regions and the second implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.