发明名称 Method forming through-via using electroless plating solution
摘要 The present invention provides a method for forming a through-via, including the steps of (1) forming an alloy film as a diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (2) forming an alloy film as a diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-containing polymer; and (3) stacking a copper seed layer on the diffusion-preventive layer formed in each of steps (1) and (2) by use of an electroless copper plating solution.
申请公布号 US9401307(B2) 申请公布日期 2016.07.26
申请号 US201514627545 申请日期 2015.02.20
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 Tanaka Keiichi;Putra Priangga Perdana
分类号 H01L21/768;H01L23/532;H01L23/48;H01L25/065 主分类号 H01L21/768
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for forming a through-via, the method comprising: (i) forming a first alloy film as a first diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution comprising at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (ii) forming a second alloy film as a second diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution comprising at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-comprising polymer; and (iii) stacking a copper seed layer on the first diffusion-preventive layer and the second diffusion-preventive layer by use of an electroless copper plating solution, wherein the amino group-comprising polymer is an allylamine polymer, a diallylamine polymer, or a copolymer comprising allylamine or diallylamine.
地址 Chiyoda-ku JP