Method and system for forming patterns using charged particle beam lithography

摘要

A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.

主权项

1. A method for optical proximity correction (OPC) comprising:
inputting a desired pattern for a substrate to be manufactured using an optical lithographic process with a photomask; inputting a substrate model for transferring a pattern from the photomask to the substrate using the optical lithographic process, wherein the substrate model has been determined using a pre-existing mask model for forming a pattern on the photomask using charged particle beam lithography, wherein effects which are included in the mask model are excluded from the substrate model; and calculating an ideal pattern for the photomask from the desired pattern for the substrate using the substrate model, wherein the calculating is performed using a computing hardware device.