| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can further reduce microbubbles generated at developing solution dropping, and that can further reduce pattern defects, and thus, that is suitable for manufacturing a silicon carbide semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes a photoengraving step including a step of performing developing solution immersion processing. The step of performing developing solution immersion processing includes: a step (a) of dropping developing solution 3 onto a silicon carbide semiconductor substrate 1, and forming a developing solution film 4 so as to have a film thickness larger than 6 μm; and a step (b) of thinning the film thickness of the developing solution film 4 to 6 μm or less. |
