MAGNETIC MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve a material compatible with CMOS process technology, thermal stability and electrical properties of a spin transfer torque magnetic random access memory (STTMRAM) device.SOLUTION: A magnetic element comprises a metal underlayer 302 and a seed layer 303 on the metal underlayer, the seed layer comprising alternating layers of a first metal 303a and a second metal 303b. The alternating layers of the first metal and the second metal are repeated n times with 2≤n≤20. An STTMRAM element comprises: a seed layer 303 comprising alternating layers of a first metal and a second metal; a magnetic tunnel junction (MTJ) element with a perpendicular orientation including a reference layer 304 formed on the seed layer, a tunnel barrier layer 305 formed on the reference layer, a storage layer 306 formed on the tunnel barrier layer; a top electrode 307; and a bottom electrode 301.