| 摘要 |
PROBLEM TO BE SOLVED: To reduce recovery current in a semiconductor device having an IGBT region and a FWD region.SOLUTION: A semiconductor device comprises a FWD region 1b in which first conductivity type injection suppression regions 16 having an impurity concentration higher than that of a drift layer 11 and second conductivity type contact regions 17 having an impurity concentration higher than that of a base layer 12 are alternately formed on a surface layer part of the base layer 12 along an extension direction of a trench 13. With this configuration, since injection of a carrier is suppressed by the injection suppression region 16 when a FWD element diode operates, recovery current can be reduced.SELECTED DRAWING: Figure 1 |
