| 摘要 |
<p>PROBLEM TO BE SOLVED: To enlarge a diameter of a bottom part of a through hole penetrating through an insulating film formed on a first conductor and reaching the first conductor.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a first conductor on a first interlayer insulating film provided on a semiconductor substrate; sequentially forming a first stopper interlayer film, a second interlayer insulating film, a second stopper interlayer film, and a third interlayer insulating film, on the first interlayer insulating film so as to cover the first conductor; forming a first contact hole penetrating through the third interlayer insulating film, the second stopper interlayer film, and the second interlayer insulating film, and having a first inner diameter, at a position corresponding to the first conductor; enlarging an inner diameter of the first contact hole at the second interlayer insulating film to a second inner diameter larger than the first inner diameter; and forming a second contact hole continuous to the first contact hole and having a third inner diameter larger than the first inner diameter on the first stopper interlayer film to expose the first conductor.</p> |
