COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of obtaining excellent and stable withstand voltage, and a method for manufacturing the same.SOLUTION: A compound semiconductor device includes: a substrate 11; a nitride layer 12 formed on the surface of the substrate 11; an AlN layer 13 which is formed on the nitride layer 12 and has no pit with a diameter of 15 nm or more existing on the surface; and a compound semiconductor layer 14 which is formed above the AlN layer 13 and contains gallium and nitrogen. The compound semiconductor layer 14 includes: a superlattice buffer layer 15 formed above the AlN layer 13; and an active layer 16 formed above the superlattice buffer layer 15.