| 摘要 |
<p>PROBLEM TO BE SOLVED: To estimate hot carrier life in consideration of influences caused by process variation in gate length, and to improve assessment accuracy.SOLUTION: A life assessment method for a semiconductor element includes: a step S2 of dividing a plurality of assessment target MOS transistors into a plurality of groups; a step S3 of performing an acceleration test by using a plurality of biases that are higher than an operation voltage and different from each group, to the MOS transistors; a step S4 of estimating each hot carrier life at the plurality of biases for each of the plurality of groups; steps S5 and S6 of measuring gate lengths of the MOS transistors and estimating each gate length; a step S7 of further dividing the MOS transistors depending on variation in gate length, in response to the assessment result of the gate lengths; and a step S8 of estimating the hot carrier life at the operation voltage of the MOS transistors by using data of hot carrier life in the acceleration test.</p> |
