| 摘要 |
<p>In a plasma processing method of performing a plasma etching process on a metallic material by using halogen gas, and a vacuum processing apparatus, provided is a plasma processing method capable of removing a residual halogen component on a specimen and preventing the surface oxidation of the metallic material and a vacuum processing apparatus. The present invention, in a plasma processing method of performing a plasma etching process on a specimen having a metal-containing layer, includes: performing a plasma process on the specimen by using a mixture gas of halogen gas and nitrogen gas, generating plasma by the mixture gas of oxygen gas and inert gas in a plasma generation chamber and a post process chamber for post-processing the plasma-processed specimen, and transferring the plasma generated through a transfer path arranged between the post process chamber and the plasma generation chamber and performing a post process on the specimen.</p> |
