NITRIDE-BASED TRANSISTOR WITH NITROGEN INJECTION AREA AND METHOD OF FABRICATING THE SAME

摘要

The present invention provides a nitride-based transistor with a normally turn off property. The nitride-based transistor according to one embodiment of the present invention includes a channel layer which includes a first nitride-based semiconductor, a barrier layer which is arranged on the channel layer and includes a second nitride-based semiconductor which has an energy band gap which is different from the energy band gap of the first nitride-based semiconductor, a source electrode, a gate electrode, and a drain electrode which are separately arranged on the barrier layer, and a nitrogen injection area which is formed on at least part of the channel layer and the barrier layer located on the lower side of the gate electrode.