| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor which can increase the maximum current, and which has low ON-resistance.SOLUTION: A field-effect transistor comprises a plurality of unit elements, and has a plurality of annular gate electrodes provided so as to correspond to each unit element, drain electrodes provided in drain electrode formation regions inside the annular gate electrodes, respectively, and source electrodes provided outside the gate electrodes, on a first surface that is one surface of a semiconductor layer, and in the field-effect transistor, a source-gate interval between the source electrode and the gate electrode is smaller than a drain-gate interval between the drain electrode and the gate electrode. The source electrodes are provided so as to be divided into a plurality units with respect to one unit element. The divided source electrodes are provided in source electrode formation regions surrounded by the gate electrodes of the adjacent unit elements. Each of the source electrode formation regions is formed to be smaller than each of the drain electrode formation regions. |
