| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve such a problem of a conventional phase change memory element that in order to reduce the contact area of a heater electrode and a phase change material, the hole diameter is reduced by forming a sidewall on the sidewall of a contact hole, and the heater electrode is embedded in the reduced hole.SOLUTION: A semiconductor device includes a lower electrode 2 and a heater electrode 3P of pillar shape standing on the lower electrode 2 in contact therewith, a phase change material 11 in contact with the upper surface of the heater electrode 3P, an upper electrode 12 arranged above the heater electrode 3P via the phase change material 11 and a sidewall surrounding the heater electrode 3P, a first insulating film 9 constituting a continuous bottom face between the heater electrodes 3P, and a second insulating film 10 formed on the bottom surface of the first insulating film 9. After the heater electrode 3P is made to have a pillar shape by double patterning, the first insulating film 9 and the second insulating film 10 are formed.</p> |
