| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of reducing the contact resistance between an electrode and a p-type region, and to provide a method of manufacturing the silicon carbide semiconductor device.SOLUTION: A silicon carbide semiconductor device 1 comprises a silicon carbide layer 10, an insulation layer 2, and an electrode 50. The carbide layer 10 includes: a first p-type region 5b that is in contact with a first principal surface 10a; and a first n-type region 14 that is in contact with the first p-type region 5b and the first principal surface 10a. The insulation layer 2 is in contact with the first p-type region 5b on the first principal surface 10a. The electrode 50 forms a Schottky contact with the first n-type region 14 on the first principal surface 10a and also is in contact with the insulation layer 2. The electrode 50 is in contact with a fourth principal surface 3a of the insulation layer 2, and also in contact with a side surface 3c so as to surround, in a planar view, a side surface 3c of the insulation layer 2.</p> |
