Tunneling diode, tunneling transistor, tunneling photodiode, and tunneling phototransistor with the structure of graphene-insulator-semiconductor

摘要

A tunneling diode with a graphene-insulator-semiconductor structure according to the present invention includes a graphene layer, a non conductive layer which is stacked on the lower side of the graphene layer, a semiconductor layer which is stacked on the lower side of the non conductive layer, a first electrode which is formed on the graphene layer, and a second electrode which is formed on the semiconductor layer.