EPITAXIAL WAFER

摘要

The present invention relates to an epitaxial wafer with high quality capable of improving a yield. The epitaxial wafer according to the present invention includes a substrate and an epitaxial structure which includes a buffer layer which is formed on the substrate and an active layer which is formed on the buffer layer. The basal plane dislocation density of the epitaxial structure is 0.1unit/cm^2 or less. The surface defect density of the active layer is 0.1unit/cm^2 or less.