| 摘要 |
<p>PURPOSE: An ultra violet light emitting diode with a aluminum reflection structure and a fabrication method of the same are provided to improve the characteristic of an ohmic electrode by covering a reflective structure with the ohmic electrode. CONSTITUTION: An ultraviolet light emitting diode comprises a first conductive semiconductor layer(55), an active layer(57), a second conductive semiconductor layer(59), an Al reflective structure(60), and an ohmic electrode(65). The Al reflective structure is formed on the second conductive semiconductor layer. The Al reflective structure exposes a part of the second conductive semiconductor layer to the outside. The ohmic electrode covers an exposed second conductive semiconductor layer. The active layer emits the ultraviolet light.</p> |
